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Study of annealing conditions on the formation of ohmic contacts on p+ 4H–SiC layers grown by CVD and LPE

Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringApplied PhysicsSemiconductor MaterialSemiconductor Device FabricationP+ 4H–sicOhmic ContactsChemical Vapor DepositionCarbide