Very low-noise HEMTs using a 0.2μm T-gate

Abstract

A very low-noise, high-electron-mobility transistor has been fabricated using a 0.2 μm T-shaped gate. At 12 GHz, a noise figure of 0.61 dB with an associated gain of 12.58dB has recently been measured. This is the lowest noise figure ever reported for an HEMT at this frequency