Journal of Applied Crystallography · 1976 · 63 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsCrystal StructureElectronic MaterialsCrystallographyDefect CharacterizationDefectsSemiconductor DefectsX-ray CrystallographyX-ray DiffractionDefect ClustersDefect MetrologyDiffraction TopographySiliconSilicon DefectsSurface DefectsSurface Defects CharacterizationX-ray Topography
A double-diffractometric method for X-ray topography revealing the smallest crystal defects in as-grown silicon by a relatively low display is described.