Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon

Y. Yatsurugi, Nobu Akiyama, Yoshiyuki Endo et al. · Journal of The Electrochemical Society · 1973 · 272 citations

Natural Sciences, Chemistry, Materials Science +13

Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption

A. Baghdadi, W Murray Bullis, M.C. Croarkin et al. · Journal of The Electrochemical Society · 2006 · 151 citations

Natural Sciences, Chemistry, Materials Science +14

Concentration and Behavior of Carbon in Semiconductor Silicon

Tadashi Nozaki, Yoshifumi Yatsurugi, Nobuyuki AKIYAMA · Journal of The Electrochemical Society · 1970 · 146 citations

Engineering, Materials Engineering, Materials Science +15

Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters

C. Reimann, M. Trempa, Thomas Jung et al. · Journal of Crystal Growth · 2010 · 73 citations

Engineering, Materials Engineering, Materials Science +15

Electronic activity of SiC precipitates in multicrystalline solar silicon

Jan Bauer, Otwin Breitenstein, Jean‐Patrice Rakotoniaina · physica status solidi (a) · 2007 · 64 citations

Engineering, Materials Engineering, Materials Science +17