Solid phase epitaxy of deposited amorphous Ge on GaAs

Abstract

Solid phase epitaxial growth of electron beam deposited amorphous germanium on GaAs has been obtained. Contamination at the Ge/GaAs interface is observed to impede and even prevent epitaxy of the deposited Ge layer. Complete epitaxy of the Ge was obtained by thermal annealing (400 °C for 1 h) of layers deposited on in situ sputter cleaned GaAs substrates.