High performance oxide thin film transistors with double active layers

Abstract

We successfully integrated the high performance oxide thin film transistors with double active layers. The active layer is composed of IZO (or ITO) and GIZO layers. The TFT with ITO/GIZO double active layer shows a high mobility of 104 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V.sec, the acceptable threshold voltage of about 0.5 V and the low Vth shift less than 1 V under voltage stress. These are very promising results for applications in driving large area AMOLED and AMLCD display.