Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy - Concepedia

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Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy

15

Citations

9

References

1989

Year

Shuji Nakamura, Shiro Sakai, Shi Chang, Ramu V. Ramaswamy, Jaehoon Kim, G. Radhakrishnan, John K. Liu, J. Katz

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsSemiconductor Device FabricationMolecular Beam EpitaxyGaas-coated Si SubstratesEpitaxial GrowthCompound Semiconductor

References

	Year	Citations

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