Publication | Closed Access
f<inf>T</inf> = 688 GHz and f<inf>max</inf> = 800 GHz in L<inf>g</inf> = 40 nm In<inf>0.7</inf>Ga<inf>0.3</inf>As MHEMTs with g<inf>m_max</inf> &#x003E; 2.7 mS/&#x00B5;m
49
Citations
2
References
2011
Year
Unknown Venue
Millimeter Wave TechnologyEngineeringRadio FrequencyPhysicsBarrier LayerApplied PhysicsComputer EngineeringComputational ElectromagneticsMetamorphic HemtsMicroelectronicsPotential Barrier
We have demonstrated 40-nm In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</sub> As Metamorphic HEMTs (MHEMTs) with a record value in f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> . The devices feature a Pt gate sinking process to effectively thin down the In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> As barrier layer, together with dual Si d-doping in the barrier to lower the potential barrier in the S/D access region. The fabricated device with L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> = 40-nm exhibits V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> = 0.05 V, g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m,max</sub> = 2.7 mS/μm, f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> = 688 GHz and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> = 800 GHz. In addition, we have developed an analytical model of f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> in a III-V HEMT based on a small-signal equivalent circuit, which provides an excellent agreement with measured f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> . This in turns guides a realistic way to further improve f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> beyond THz.
| Year | Citations | |
|---|---|---|
Page 1
Page 1