Location of <i>p-n</i> and <i>l-h</i> junctions in semiconductors

Abstract

This article summarizes the properties of p-n and l-h junctions and the methods which have used these properties to locate them. Critical comments are made and criteria are given which must be considered when choosing a method, and some methods are recommended for the elements germanium and silicon. Lastly, an idea is given of the range of useful understanding of semiconductors which has resulted from use of these methods.