Calculated Temperature Dependence of Mobility in Silicon Inversion Layers

Abstract

Calculations of the temperature dependence of mobility have been carried out for silicon (001) inversion layers in which Coulomb scattering and surface roughness scattering, but not phonon scattering, are included. The wave-vector and temperature dependence of screening contribute to a temperature-dependent part of the scattering rate that increases approximately linearly with temperature from 0 to 40 K. The results are supported by recent experiments of Cham and Wheeler.