Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters

Abstract

A new measurement method for deep levels in semiconductors is proposed, by which the measurement of the transient change of capacitance is performed under an isothermal condition (Isothermal Capacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis system by a programmable calculator. Computer simulation and experiment by the method in the case of Au-doped Si are demonstrated. It is shown that the method is one of useful tools for spectroscopic analysis of deep levels in semiconductors.