Raman scattering in InAs1−<i>x</i>Sb<i>x</i> grown by organometallic vapor phase epitaxy

Abstract

The first investigation of the lattice dynamics of the ternary alloy InAs1−xSbx has been made using Raman scattering. The InAs1−xSbx epilayers were grown by organometallic vapor phase epitaxy on (100) InAs and InSb substrates over the entire composition range. The spectra in the optical phonon frequency range show only one set of longitudinal- and transverse-optical (LO,TO) modes, which vary continuously with composition for x≤0.6, and two sets of LO modes for x&amp;gt;0.6. Both disorder-activated acoustic and optical phonon modes also appear.