Growth of heavily Be-doped AlInP by gas source molecular beam epitaxy

Abstract

Heavily Be-doped p-type AlInP layers have successfully grown on (001)GaAs by gas source molecular beam epitaxy (GSMBE) using phosphine (PH3). Net hole concentration (Nh) as high as about 3.5×1018 cm−3 is achieved for the first time. The surface morphology is found to be smooth up to a Be concentration of 3×1019 cm−3. The resistivity for Nh=3.5×1018 cm−3 is as low as 0.3 Ω cm. The improvement of the electrical activity and surface morphology may be ascribed to subhidrides of phosphorus decomposed from PH3 during GSMBE growth.