Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier Layer

Abstract

By inserting a thin AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">δ</sub> barrier layer between the electrode and tantalum oxide resistive switching layer, the triple-layer ReRAM devices with improved resistive switching performance are demonstrated. Pulsed programming measurements without external current compliance show 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cycle endurance without performance degradation. The ON/OFF ratio exceeds 1000. Low operation current is achieved using a smaller SET compliance current. Multilevel states are obtained through adjusting SET and RESET conditions, and retention longer than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> s at 125°C is reported.