Heteroepitaxial growth of SrO films on Si substrates

Abstract

Epitaxial growth of SrO thin films onto Si(111) and (100) substrates by means of molecular-beam epitaxy has been demonstrated. The orientation relationships between epitaxial SrO and Si were found to be (111)SrO//(111)Si and [112̄]SrO//[112̄]Si, (100)SrO//(100)Si and [011]SrO//[001]Si. The composition of the grown films was Sr:O=1:1. In addition, it has been shown that it was possible to grow layers with no Si surface oxidation and no noticeable interdiffusion at the interfaces. These SrO films possess a low dielectric constant (3.0) and a high breakdown field (5×106 V/cm).