Electron trapping in very thin thermal silicon dioxides

Abstract

Constant current stress and C-V techniques have been used to study the electron trapping phenomenon in thermally grown thin SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> films A mathematical model based on trap filling and trap generation is proposed and the capture cross-sections, trap generation rates, the centroids, and the densities of the pre-existing and generated traps are determined as functions of the current density. The generation of interface states is also characterized.