High Mobility Ambipolar Charge Transport in Polyselenophene Conjugated Polymers

Abstract

High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm2 V−1 s−1 are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors. Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.