New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime - Concepedia

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New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime

11

Citations

11

References

2011

Year

N. Lakhdar, F. Djeffal

Microelectronics Reliability

Subthreshold RegimeElectrical EngineeringEngineeringSubmicron Gan-mesfets ReliabilityNanoelectronicsApplied PhysicsGan Power DeviceMicroelectronicsSemiconductor Device

References

	Year	Citations

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