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Growth morphology determination in the initial stages of epitaxy by XPS
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1984
Year
Materials EngineeringMaterials ScienceGrowth Morphology DeterminationX-ray SpectroscopyEngineeringCrystalline DefectsElectron SpectroscopyNanotechnologyCrystal Growth TechnologyApplied PhysicsCondensed Matter PhysicsAtomic PhysicsInitial StagesElectron DiffractionMolecular Beam EpitaxyEpitaxial GrowthAuger ElectronsPolar Angle
It is found that for Cu(100) and Ni(100) x-ray photoelectrons and Auger electrons with energies of ∼1000 eV exhibit intensity variations versus polar angle which are dominated by forward scattering off neighboring atoms. In monitoring the epitaxial growth of Cu on Ni(100) this phenomenon is shown to yield clear and easily available structural information about the arrangement of atoms in the Cu adlayers.