Buckling of thermally-grown SiO₂thin films

Abstract

The difference in thermal expansion causes compression in SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> thermally grown on Si wafers. Unsupported windows of SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films.