Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications

InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

S. R. Kurtz, Andrew A. Allerman, E. D. Jones et al. · Applied Physics Letters · 1999 · 537 citations · Full text

Engineering, Materials Engineering, Materials Science +17

1-eV solar cells with GaInNAs active layer

Daniel J. Friedman, John F. Geisz, Sarah Kurtz et al. · Journal of Crystal Growth · 1998 · 418 citations

Engineering, Electrical Engineering, Materials Science +14

Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen

S. R. Kurtz, Andrew A. Allerman, C. H. Seager et al. · Applied Physics Letters · 2000 · 163 citations · Full text

Engineering, Materials Science, Physics +17

Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four‐junction solar cells

Daniel J. Friedman, Sarah Kurtz · Progress in Photovoltaics Research and Applications · 2002 · 83 citations

Engineering, Electrical Engineering, Materials Science +17

Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance

Kerstin Volz, Torsten Torunski, Bernardette Kunert et al. · Journal of Crystal Growth · 2004 · 40 citations

Engineering, Materials Engineering, Materials Science +14