European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005 · 2005 · 33 citations · 11 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsRadio-frequency Integrated CircuitsCircuit TopologyCmos Analog Integrated CircuitsCmos Radio-frequency CircuitsHigh-frequency OperationInsertion LossInsertion Loss MeasurementMicrowave SwitchesRf Switches
A dc-to-50-GHz SPDT switch in standard bulk 0.18-/spl mu/m CMOS process is demonstrated in this paper. In order to extend the operation frequency, the traveling-wave circuit topology is utilized. The switch achieves a measured insertion loss of less than 6 dB, a measured isolation of better than 38 dB from dc to 50 GHz. The measured input P/sub 1 dB/ of 17.4 dBm at 5.8 GHz and 19.6 dBm at 40 GHz is attained. The chip size is only 0.5 /spl times/ 0.5 mm/sup 2/. To our knowledge, this work is the first CMOS switch operating from dc to millimeter-wave frequency with a miniature chip size.
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A fully-integrated CMOS RFIC for Bluetooth applications
Aruna B. Ajjikuttira, Chester Leung, Ee-Sze Khoo et al. · 2002 · 73 citations
T. Ohnakado, Satoshi Yamakawa, T. Murakami et al. · IEEE Journal of Solid-State Circuits · 2004 · 64 citations