A novel superlattice infrared source

Abstract

A novel superlattice infrared source is proposed. The device utilizes radiative intersubband transitions and resonant tunneling phenomena in a finite superlattice. Theoretical estimates of the radiative transition lifetime and resonant tunneling time are given, which show the possibility of obtaining an infrared light-emitting diode, or even a laser. The device has a narrow emission spectrum, and the wavelength can be adjusted by varying device parameters. The device design has no long wavelength limitation. A specific design of an AlGaAs-GaAs 10-μm superlattice infrared source is discussed.