30.1 8b Thin-film microprocessor using a hybrid oxide-organic complementary technology with inkjet-printed P<sup>2</sup>ROM memory

Abstract

We present an 8b general-purpose microprocessor realized in a hybrid oxide-organic complementary thin-film technology. The n-type transistors are based on a solution-processed n-type metal-oxide semiconductor, and the p-type transistors use an organic semiconductor. As compared to previous work utilizing unipolar logic gates [1], the higher mobility n-type semiconductor and the use of complementary logic allow for a >50x speed improvement. It also adds robustness to the design, which allowed for a more complex and complete standard cell library. The microprocessor consists of two parts, a processor core chip and an instruction generator. The instructions are stored in a Write-Once-Read-Many (WORM) memory formatted by a post-fabrication inkjet printing step, called Print-Programmable Read-Only Memory (P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ROM). The entire processing was performed at temperatures compatible with plastic foil substrates, i.e., at or below 250°C [2].