A steady-state constant capacitance method for the characterization of deep energy levels in semiconductors

Abstract

A steady-state constant capacitance technique is presented for the study of photoionization cross sections of deep energy levels. The analysis of the data obtained with this technique is less time consuming and more straightforward than transient measurements. The method is particularly suitable when the sample contains high concentrations of deep energy levels. The feasibility of the technique is exhibited by presenting data obtained in ZnSe:Cu and CdS:Cu.