Publication | Open Access
Exciton optical transitions in a hexagonal boron nitride single crystal
62
Citations
15
References
2011
Year
Optical MaterialsEngineeringPhotoluminescence ExcitationHexagonal BoronOptoelectronic DevicesLuminescence PropertyBoropheneSemiconductorsBoron NitrideHexagonal Boron NitrideOptical PropertiesExciton Optical TransitionsQuantum MaterialsPhotoluminescencePhysicsOptoelectronic MaterialsSynchrotron Radiation ExcitationApplied PhysicsCondensed Matter PhysicsOptoelectronics
Abstract Near band gap photoluminescence (PL) of a hexagonal boron nitride single crystal has been studied at cryogenic temperatures with synchrotron radiation excitation. The PL signal is dominated by trapped‐exciton optical transitions, while the photoluminescence excitation (PLE) spectra show features assigned to free excitons. Complementary photoconductivity and PLE measurements set the band gap transition energy to 6.4 eV and the Frenkel exciton binding energy larger than 380 meV. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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