The infra-red Faraday effect in n-type AlSb and GaP and in undoped GaP

Abstract

Infra-red Faraday rotation has been measured in n-type AlSb giving a value of the electron effective mass m* = 0.39±0.03 m0. Experimental curves showing the rotation due to the subsidiary absorption bands at 4.3 and 3.0 μm in n-type AlSb and GaP, respectively, are given. These provide evidence for rejecting the postulate that a deep donor level causes this excess absorption.