IEEE Transactions on Nanotechnology · 2013 · 83 citations · 25 references
Natural SciencesElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsMetal Oxide NanomaterialsNanostructured Electronic MaterialsNanowiresOxide SemiconductorsPhotodetectorsSemiconductor NanomaterialsForward Bias CharacteristicsHeterojunction PhotodetectorsNanowire HeterojunctionsNanowire PhotodetectorsOxide NanowiresPhotodetectionSemiconductor NanowiresZinc Oxide Nanostructures
The authors report the growth of ZnO branched nanowires on the CuO nanowires and the fabrication of p-CuO/n-ZnO heterojunction nanostructured photodetector (PD). It was found that the hydrothermally grown ZnO branched nanowires were reasonably uniform with an average length of 200 nm and an average diameter of 50 nm. Under forward bias, it was found that turn on voltage of the fabricated PD reduced from ~0.7 to ~0.2 V under ultraviolet (UV) illumination. It was also found that UV-to-visible rejection ratio of the fabricated device was larger than 100.
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ZnO Nanowire UV Photodetectors with High Internal Gain
Cesare Soci, A. Zhang, Bin Xiang et al. · Nano Letters · 2007 · 2.6K citations