Few layer graphene synthesized by filtered cathodic vacuum arc technique

Abstract

Filtered cathodic vacuum arc technique has been used to deposit amorphous carbon (a-C) films of varying thicknesses from 10 nm to 38 nm on catalytic nickel thin film grown on SiO2/Si substrates. Subsequently, a-C films were annealed in vacuum in the temperature range from 650 to 850 °C. Micro-Raman spectroscopic study in combination with optical microscopy and scanning electron microscopy has revealed few layer graphene formations with optical transmittance in the range 85%–88% with a-C films deposited with 10 nm and 18 nm thicknesses. The optimum temperature of annealing was observed to be 750 °C.