High Frequency Capacitance‐Voltage Characteristics of Thermally Grown SiO2 Films on β ‐ SiC

Abstract

Silicon dioxide films grown under dry and wet oxidation environment on films have been studied. The films had been heteroepitaxially grown on both on‐axis and 2° off‐axis (001) Si substrates. Capacitance‐voltage and conductance‐voltage characteristics of metal‐oxide‐semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off‐axis samples.