Journal of The Electrochemical Society · 1990 · 36 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsHigh-frequency Semiconductor DevicesOxide SemiconductorsSemiconductor InterfacesSemiconductor PhysicsSilicon MaterialsThin Film Electrical PropertiesCapacitance-voltage CharacteristicsCapacitance-voltage MeasurementsFixed Charge DensityInterface Trap DensityInterfacial Charge DensityOxidationSilicon DioxideWet Oxidation
Silicon dioxide films grown under dry and wet oxidation environment on films have been studied. The films had been heteroepitaxially grown on both on‐axis and 2° off‐axis (001) Si substrates. Capacitance‐voltage and conductance‐voltage characteristics of metal‐oxide‐semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off‐axis samples.