Growth of Single‐Crystalline Cubic GaN Nanotubes with Rectangular Cross‐Sections

Abstract

The first reported growth of single-crystalline GaN nanotubes with rectangular cross-sections (see Figure) synthesized using Ga2O3 powder and NH3 as reagents is described. It is envisioned that, once the cores are filled with different semiconducting materials of various bandgaps, the materials could be used for interesting electrical and optical nanodevices.