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Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition

Materials EngineeringMaterials ScienceEngineeringFast Homoepitaxial GrowthApplied PhysicsLow Trap ConcentrationSemiconductor Device FabricationEpitaxial GrowthChemical Vapor DepositionCarbide