High-Operating-Temperature MWIR Detector Diodes

Calculation of intrinsic carrier concentration in Hg1−<i>x</i>CdxTe

Gary L. Hansen, J. L. Schmit · Journal of Applied Physics · 1983 · 220 citations

Engineering, Materials Engineering, Materials Science +17

Nonequilibrium devices for infra-red detection

T. Ashley, C.T. Elliott · Electronics Letters · 1985 · 197 citations

Engineering, Electrical Engineering, Optoelectronics +12

HDVIP FPA technology at DRS Infrared Technologies

M. A. Kinch · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2001 · 66 citations

Engineering, Electrical Engineering, Optoelectronics +15

A detailed calculation of the auger lifetime in p-type HgCdTe

S. Krishnamurthy, T. N. Casselman · Journal of Electronic Materials · 2000 · 40 citations

Natural Sciences, Materials Science, Electronic Materials +9

A model for 1/f noise in diffusion current based on surface recombination velocity fluctuations and insulator trapping

R. A. Schiebel · IEEE Transactions on Electron Devices · 1994 · 24 citations

Engineering, Electrical Engineering, Materials Science +17