Applied Physics Letters · 1975 · 12 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesAir ResistanceAluminum OxidesElectrical ConductivityIon ImplantationIon-conducting MaterialsMetal-semiconductor ContactsAtmospheric PressureInterface ResistanceIon Implantation EffectsJunction GeometryJunction ResistanceOhmic Contacts
Conduction has been investigated in Al−Al2O3−Au sandwiches whose oxide is implanted with O or Al ions. The results reveal that ion implantation gives a junction type which can be electroformed, and which exhibits negative resistance in air at atmospheric pressure.
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Electrical phenomena in amorphous oxide films
G. Dearnaley, A.M. Stoneham, D. V. Morgan · Reports on Progress in Physics · 1970 · 729 citations · Full text