Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates - Concepedia

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Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates

10

Citations

8

References

2004

Year

B. J. Skromme, M. K. Mikhov, L. Chen, Giby Samson, Rong Jun Wang, I. Bhat

Materials science forum

Materials EngineeringEngineeringNanoelectronicsBias Temperature InstabilityApplied PhysicsSemiconductor Device FabricationThermal ProcessingMicroelectronicsCarbide

References

	Year	Citations

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