Growth of Gallium Arsenide by Horizontal Zone Melting

Abstract

The growth of single crystals of GaAs is discussed with reference to the horizontal zone melt technique. The crystalline perfection and polarity of grown crystals can be determined from a study of edge dislocations revealed on {111} by an HF, H2O2 etchant. Evidence of good thermal control during crystal growth is found from a correlation between the incidence of dislocations and the shape of the freezing interface. Dislocation densities can be reduced to a very low order by careful control of growth conditions.