Publication | Closed Access
Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition
82
Citations
23
References
2004
Year
Materials EngineeringMaterials ScienceElectrical EngineeringLa2o3 Gate DielectricEngineeringOxide ElectronicsApplied PhysicsGallium OxideMicroelectronicsChemical Vapor DepositionThin Film Processing
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