Concepedia

Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition

Jin-Bo Cheng, Aidong Li, Qiyue Shao, Di Wu, Yuan Wang, Yongjun Bao, Mu Wang, Zhiguo Liu, Nai‐Ben Ming

Applied Surface Science · 2004 · 84 citations · 23 references

Concepts

Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionDielectric MaterialsDielectricsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesGate Dielectric EngineeringGate DielectricsGate Oxides

References

23

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

Thermodynamic stability of binary oxides in contact with silicon

K. J. Hubbard, Darrell G. Schlom · Journal of materials research/Pratt's guide to venture capital sources · 1996 · 1.2K citations

Natural Sciences, Materials Engineering, Materials Science +14

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

G. D. Wilk, Robert M. Wallace · Applied Physics Letters · 1999 · 504 citations

Natural Sciences, Materials Engineering, Materials Science +17

MOS capacitance measurements for high-leakage thin dielectrics

Kevin Yang, Chenming Hu · IEEE Transactions on Electron Devices · 1999 · 491 citations

Engineering, Electrical Engineering, Materials Science +17

High-resolution depth profiling in ultrathin Al2O3 films on Si

E. P. Gusev, M. Copel, E. Cartier et al. · Applied Physics Letters · 2000 · 412 citations

Engineering, Materials Engineering, Materials Science +17