Ion-beam synthesis of a Si/β-FeSi2/Si heterostructure

Abstract

Ion-beam synthesis of a buried β-FeSi2 layer in Si is demonstrated. In the experiments Si(111) substrates have been implanted with 450-keV Fe+ ions. Samples have been analyzed by Rutherford backscattering spectrometry, x-ray diffraction, and transmission electron microscopy. Annealing at 900 °C of samples implanted with 6×1017 Fe+/cm2 causes formation of a buried layer consisting of grains with lateral dimensions of approximately 5 μm. The epitaxy of β-FeSi2 (110) and/or (101) planes parallel to the Si(111) substrate plane is observed.