Electronics Letters · 1982 · 43 citations · 1 references
Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ApplicationsIngaasp/inp PlanarLaser MaterialOptoelectronic DevicesHigh-power LasersSemiconductor LasersMolecular Beam EpitaxyCompound SemiconductorPhotonicsElectrical EngineeringIngaasp PlanarHeterostructure Laser DiodeLow ThresholdMicroelectronicsRoom TemperatureApplied PhysicsOptoelectronics
Using a new LPE growth technique, an InGaAsP/InP planar buried heterostructure laser diode (PBH-LD) has been realised in 1.3 and 1.5 μm wavelength regions. As a result of the effective carrier confinement, CW threshold currents as low as 8.5 mA and 13 mA have been obtained in 1.3 and 1.5 μm PHB-LDs, respectively, at room temperature.
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