High‐Speed Flexible Organic Field‐Effect Transistors with a 3D Structure

Abstract

High-speed, flexible organic field-effect transistors with a 3D structure are fabricated on a plastic substrate in which vertical channels are formed to realize high response speed. With the benefit of short channel lengths, the fabricated transistors show fast dynamic switching within 250 ns, which corresponds to 4 MHz operation, even with the modest carrier mobility of 0.2 cm2 V−1 s−1 in organic semiconductors deposited on the vertical sidewalls.