Publication | Open Access
Recent Advances in Electron Tomography: TEM and HAADF-STEM Tomography for Materials Science and Semiconductor Applications
246
Citations
33
References
2005
Year
Materials ScienceSemiconductor DevicesEngineeringElectron MicroscopyMicroscopyNanotechnologyScanning Probe MicroscopyMaterials CharacterizationApplied PhysicsElectron TomographyMicroanalysisElectron DiffractionElectron MicroscopeHaadf-stem TomographyCrystallographyRecent AdvancesTomographyRadiology
Electron tomography is a well‑established technique for 3D structure determination of amorphous specimens in life sciences, and recent advances in nanotechnology and the semiconductor industry have heightened the need for high‑resolution 3D structural information in physical sciences. The study evaluates the capabilities and limitations of transmission electron microscopy (TEM) and high‑angle‑annular‑dark‑field scanning transmission electron microscopy (HAADF‑STEM) tomography for 3D structural characterization of materials ranging from partially crystalline to highly crystalline. Using TEM and HAADF‑STEM tomography, the authors assess 3D structural information across this spectrum of material crystallinity. Their analysis of catalysts, a hydrogen‑storage material, and semiconductor devices shows that electron tomography can resolve 1–2 nm features, with bright‑field TEM tomography reliably imaging partially crystalline materials and HAADF‑STEM tomography providing versatile high‑resolution imaging of highly crystalline semiconductors.
Electron tomography is a well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life sciences applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution three-dimensional (3D) structural information in physical sciences. In this article, we evaluate the capabilities and limitations of transmission electron microscopy (TEM) and high-angle-annular-dark-field scanning transmission electron microscopy (HAADF-STEM) tomography for the 3D structural characterization of partially crystalline to highly crystalline materials. Our analysis of catalysts, a hydrogen storage material, and different semiconductor devices shows that features with a diameter as small as 1-2 nm can be resolved in three dimensions by electron tomography. For partially crystalline materials with small single crystalline domains, bright-field TEM tomography provides reliable 3D structural information. HAADF-STEM tomography is more versatile and can also be used for high-resolution 3D imaging of highly crystalline materials such as semiconductor devices.
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