Polarized memory effect in the device including the organic charge-transfer complex, copper-tetracyanoquinodimethane

Abstract

The polarized memory effect, in which the switching between the on and off states depends on the polarity of the bias voltage, was found in the device including the film of the organic charge-transfer complex, copper-tetracyanoquinodimethane (Cu-TCNQ). The device consists of three layers, Al/Cu-TCNQ/Cu. The dc I-V characteristics and the dielectric behavior up to 106 Hz were studied. The number of the charge carriers which make the dielectric response below 103 Hz increases in the on state. The mechanism of the switching is briefly discussed.