Homoepitaxial growth of CoSi2 and NiSi2 on (100) and (110) surfaces at room temperature

Abstract

Homoepitaxial growth of NiSi2 and CoSi2 on (100) and (110) surfaces is demonstrated at room temperature. Codeposition of stoichiometric silicide, by molecular beam epitaxy, onto thin, preannealed silicide layers on Si (100) and (110) leads to single-crystal growth. High quality NiSi2 and CoSi2 films with ion channeling χmin<4% have been fabricated. The epitaxial orientation and the interfacial defect structures of the original silicide templates are maintained in the overgrown silicide. The high temperatures usually required for the formation of NiSi2 and CoSi2 are related to the nucleation and mass transport processes. It is concluded that the reaction of disilicide takes place at room temperature.