Permittivity of GaAs epilayers containing arsenic precipitates

Abstract

The real part of the permittivity of annealed low temperature grown gallium arsenide (LTG GaAs) has been measured via capacitance measurements taken on p-i-n devices. The intrinsic region of the devices contained LTG GaAs annealed at 700, 800, and 900 °C for 30 s. The capacitance trends as a function of frequency for the annealed LTG GaAs samples were compared to that of GaAs grown at a standard substrate temperature. An increased screening of the electric field was observed for the LTG samples as the test frequency was lowered. The capacitance measurements were taken at various test temperatures, enabling the computation of an activation energy of the electric field screening in the annealed LTG GaAs from Arrhenius plots.