Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon. I. Metallic Samples

Abstract

Results are presented for the measured electron spin resonance (ESR) spin susceptibilities of "metallic" phosphorus-doped silicon with ${N}_{D}\ensuremath{\ge}1\ifmmode\times\else\texttimes\fi{}{10}^{19}$ donors/${\mathrm{cm}}^{3}$. These results agree closely for the case of ${N}_{D}\ensuremath{\gtrsim}4\ifmmode\times\else\texttimes\fi{}{10}^{19}$ donors/${\mathrm{cm}}^{3}$ with values calculated on the basis of a "rigidband" model of noninteracting Pauli electrons. Evidence for a non-Pauli temperature-dependent-susceptibility component was found in the lower portion of our sample-concentration range. Static-susceptibility data are used together with our results to obtain the diamagnetic susceptibility which exhibits a concentration dependence consistent with the predictions of Kjeldaas and Kohn. Measurements of $g$ values and linewidths are presented as evidence for the proposal that the Fermi level enters the host conduction band at a concentration ${N}_{D}$ $\ensuremath{\approx}2\ifmmode\times\else\texttimes\fi{}{10}^{19}$ donors/${\mathrm{cm}}^{3}$. These data are also used to verify Elliot's theory of impurity-scattering spin relaxation and to demonstrate $g$-value anisotropies characteristic of the silicon conduction band.