Boron Diffusion in Silicon Oxides and Oxynitrides

Abstract

A new model is developed for boron diffusion in silicon oxides and oxynitrides in which boron diffuses substitutionally for silicon atoms, and the role of incorporated nitrogen is to occlude diffusion pathways. A Monte Carlo simulation based on this model, when compared to a series of experiments on p‐MOS‐type structures, accurately accounts for lowered diffusivities due to incorporated nitrogen.