Applied Physics Letters · 2007 · 12 citations · 29 references
EngineeringField-effect TransistorsChemistryWater MoleculesSemiconductor DeviceCarbon-based MaterialNanoelectronicsElectronic EngineeringSingle-walled CarbonCarbon NanotubesSurfactant SolutionDevice ModelingElectrical EngineeringNanotechnologyHysteretic Transfer CharacteristicsSurfactant LayersNanophysicsNanomaterialsConfined Water HydrodynamicsApplied PhysicsInterfacial PhenomenaNanotubes
In both double-walled carbon nanotube field-effect transistors (DWCNT-FETs) and single-walled carbon nanotube field-effect transistors (SWCNT-FETs), “clockwise” hysteretic transfer characteristics are observed. These characteristics can be attributed to mobile ions or charged clusters in surfactant layers around the tube channels. Compared with SWCNT-FETs, more significant surfactant influences on the transfer characteristics are observed in DWCNT-FETs due to superior surfactant adsorption properties of double-walled carbon nanotubes. Our findings suggest that not only water molecules but also the surfactants play critical roles in dominating the hystereses, especially when the carbon nanotubes are double walled.
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Single- and multi-wall carbon nanotube field-effect transistors
Richard Martel, Thomas Schmidt, Herbert Shea et al. · Applied Physics Letters · 1998 · 2.8K citations · Full text
Engineering, Field-effect Transistors, Carbon Nanotechnology +16
Carbon Nanotubes as Schottky Barrier Transistors
Stefan Heinze, J. Tersoff, Richard Martel et al. · Physical Review Letters · 2002 · 1.3K citations · Full text
Electrical Engineering, Schottky Barrier Transistors, Engineering +15
Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect Transistors
W. Ray Kim, Ali Javey, Ophir Vermesh et al. · Nano Letters · 2003 · 962 citations
Electrical Engineering, Chemical Engineering, Engineering +13
Phaedon Avouris · Chemical Physics · 2002 · 896 citations