Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions

Abstract

Vertical-emitting AlAs∕GaAs microcavity pillars with a type of GaInAs quantum dots within a one λ cavity have been realized based on high reflectivity distributed Bragg reflectors. High-quality factors were achieved due to an improved fabrication technology with a maximum quality factor of 27 700 for a micropillar with a diameter of 4μm. The dot dimensions could be enlarged by one order of magnitude using a low strain Ga0.7In0.3As nucleation layer.