Minimizing threading dislocations by redirection during cantilever epitaxial growth of GaN

Abstract

A 40-fold reduction in density of vertical threading dislocations (VTDs) at the surface of GaN is obtained with cantilever epitaxy by using narrow (<1 μm) mesas etched into a sapphire substrate and conditions producing angled {11-22} facets to initiate growth by metalorganic chemical vapor deposition. These two techniques redirect VTDs over the mesas to the horizontal and away from device areas above. Further reductions appear possible if the facets uniformly cover all mesas prior to cantilever growth.