High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator

Abstract

Ultrahigh channel mobility is demonstrated for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with Al2O3 gate insulators fabricated at low temperatures by metal-organic chemical-vapor deposition. Relatively high field effect channel mobility of 64cm2∕Vs is obtained when the Al2O3 gate insulator is deposited at 190°C. Furthermore, extremely high field effect mobility of 284cm2∕Vs was obtained for a MOSFET fabricated with an ultrathin thermally grown SiOx layer inserted between the Al2O3 and SiC.